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| FGA90N33ATD 330V, 90A PDP Trench IGBT April 2008 FGA90N33ATD 330V, 90A PDP Trench IGBT Features * High current capability * Low saturation voltage: VCE(sat) =1.1V @ IC = 20A * High input impedance * Fast switching * RoHS compliant tm General Description Using Novel Trench IGBT Technology, Fairchild's new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. Applications * PDP System C G TO-3P GCE E Absolute Maximum Ratings Symbol VCES VGES IC IC pulse(1) IC pulse(2) PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Pulsed Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds @ TC = 25oC @ TC = 25oC @ TC = 25oC o Ratings 330 30 90 220 330 223 89 -55 to +150 -55 to +150 300 Units V V A A A W W oC o @ TC = 25 C @ TC = 100oC C oC Thermal Characteristics Symbol RJC(IGBT) RJC(Diode) RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Typ. - Max. 0.56 1.16 40 Units o o C/W C/W oC/W Notes: (1) Repetitive test , Pulse width=100usec , Duty=0.1 (2) Half sine wave , D<0.01, Pulse width<5usec *IC pluse limited by max Tj (c)2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGA90N33ATD Rev. A FGA90N33ATD 330V, 90A PDP Trench IGBT Package Marking and Ordering Information Device Marking FGA90N33ATD Device FGA90N33ATDTU Package TO-3P Packaging Type Tube Max Qty Qty per Tube 30ea per Box - Electrical Characteristics of the IGBT Symbol Off Characteristics BVCES ICES IGES TC = 25C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Collector to Emitter Breakdown Voltage VGE = 0V, IC = 400A Collector Cut-Off Current G-E Leakage Current VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 330 - - 400 400 V A nA On Characteristics VGE(th) G-E Threshold Voltage IC = 250A, VCE = VGE IC = 20A, VGE = 15V VCE(sat) Collector to Emitter Saturation Voltage IC = 45A, VGE = 15V, IC = 90A, VGE = 15V, IC = 90A, VGE = 15V, TC = 125oC Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz 2200 135 100 pF pF pF 2.5 4.0 1.1 1.3 1.6 1.7 5.5 1.4 V V V V V Switching Characteristics td(on) tr td(off) tf td(on) tr td(off) tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 200V, IC = 20A, VGE = 15V VCC = 200V, IC = 20A, RG = 5, VGE = 15V, Resistive Load, TC = 125oC VCC = 200V, IC = 20A, RG = 5, VGE = 15V, Resistive Load, TC = 25oC 23 40 100 180 20 40 110 250 95 12 40 240 300 ns ns ns ns ns ns ns ns nC nC nC FGA90N33ATD Rev. A 2 www.fairchildsemi.com FGA90N33ATD 330V, 90A PDP Trench IGBT Electrical Characteristics of the Diode Symbol VFM trr Irr TC = 25C unless otherwise noted Parameter Diode Forward Voltage IF = 10A Test Conditions TC = 25oC o Min. - Typ. 1.1 0.96 23 36 2.8 5.1 32 91 Max 1.5 - Units V TC = 125 C TC = 25oC TC = 125oC 125oC 125oC TC = 25oC TC = TC = TC = 25oC Diode Reverse Recovery Time IF =10A, dI/dt = 200A/s ns Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge A Qrr nC FGA90N33ATD Rev. A 3 www.fairchildsemi.com FGA90N33ATD 330V, 90A PDP Trench IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics 160 TC = 25 C o Figure 2. Typical Output Characteristics 160 TC = 125 C o 20V 15V 10V 9V 20V 15V 12V 10V 9V 8V Collector Current, IC [A] 120 Collector Current, IC [A] 12V 8V 120 80 7V 80 7V 40 40 VGE = 6V VGE = 6V 0 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 5 0 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 5 Figure 3. Typical Saturation Voltage Characteristics 160 Common Emitter VGE = 15V Figure 4. Transfer Characteristics 160 Common Emitter VCE = 20V Collector Current, IC [A] 120 Collector Current, IC [A] TC = 25 C TC = 125 C o o TC = 25 C o 120 T = 125oC C 80 80 40 40 0 0 1 2 3 Collector-Emitter Voltage, VCE [V] 4 0 0 2 4 6 8 10 Gate-Emitter Voltage,VGE [V] 12 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 2.0 Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V Figure 6. Saturation Voltage vs. VGE 20 Collector-Emitter Voltage, VCE [V] Common Emitter TC = 25 C o 1.8 90A 16 1.6 1.4 1.2 1.0 0.8 25 40A 12 8 90A IC = 20A 4 40A IC = 20A 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 FGA90N33ATD Rev. A 4 www.fairchildsemi.com FGA90N33ATD 330V, 90A PDP Trench IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 Common Emitter TC = 125 C o Figure 8. Capacitance Characteristics 4000 Common Emitter VGE = 0V, f = 1MHz Collector-Emitter Voltage, VCE [V] 16 3000 12 Capacitance [pF] Cies TC = 25 C o 2000 8 40A Coes Cres 1000 90A 4 IC = 20A 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 0 0.1 1 10 Collector-Emitter Voltage, VCE [V] 30 Figure 9. Gate charge Characteristics 15 Common Emitter Figure 10. SOA Characteristics 500 10s 100s Gate-Emitter Voltage, VGE [V] TC = 25 C o 100 Collector Current, Ic [A] 12 10 1ms 10 ms DC 9 VCC = 100V 200V 1 *Notes: 6 3 0.1 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 0 0 20 40 60 Gate Charge, Qg [nC] 80 100 0.01 1 10 100 Collector-Emitter Voltage, VCE [V] 500 Figure 11. Turn-on Characteristics vs. Gate Resistance 200 Figure 12. Turn-off Characteristics vs. Gate Resistance 5500 Common Emitter VCC = 200V, VGE = 15V IC = 20A o TC = 25 C o TC = 125 C 100 Switching Time [ns] tr 1000 Switching Time [ns] td(off) td(on) Common Emitter VCC = 200V, VGE = 15V IC = 20A TC = 25 C TC = 125 C o o tf 100 10 0 20 40 60 80 Gate Resistance, RG [] 100 10 0 20 40 60 80 Gate Resistance, RG [] 100 FGA90N33ATD Rev. A 5 www.fairchildsemi.com FGA90N33ATD 330V, 90A PDP Trench IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Collector Current 400 Figure 14. Turn-off Characteristics vs. Collector Current Common Emitter VGE = 15V, RG = 5 o TC = 25 C o TC = 125 C Common Emitter V GE = 15V, R G = 15 T C = 25 C o o Switching Time [ns] T C = 125 C 100 tr td(on) Switching Time [ns] tf td(off) 10 0 20 40 60 80 100 Collector Current, IC [A] 100 100 0 20 40 60 80 Collector Current, IC [A] 100 Figure 15. Turn off Switching SOA Characteristics Figure 16. Forward Characteristics 400 200 100 Collector Current, IC [A] 100 Forward Current, IF [A] TJ = 125 C o 10 TJ = 25 C o 10 1 TC = 25 C TC = 125 C o o Safe Operating Area 1 1 VGE = 15V, TC = 125 C o 10 100 600 0.1 0.0 0.5 Collector-Emitter Voltage, VCE [V] 1.0 1.5 2.0 Forward Voltage, VF [V] 2.5 3.0 FGA90N33ATD Rev. A 6 www.fairchildsemi.com FGA90N33ATD 330V, 90A PDP Trench IGBT Typical Performance Characteristics Figure 17. Reverse Recovery Current 4 Stored Recovery Charge, Qrr [nC] Reverse Recovery Currnet, Irr [A] Figure 18. Stored Charge 60 200A/s 3 45 200A/s 2 di/dt = 100A/s 30 di/dt = 100A/s 1 15 0 5 10 20 30 Forward Current, IF [A] 40 0 5 10 20 30 40 Forward Current, IF [A] Figure 19. Reverse Recovery Current 40 Reverse Recovery Time, trr [ns] 30 200A/s 20 di/dt = 100A/s 10 5 10 20 30 40 Forward Current, IF [A] Figure 20.Transient Thermal Impedance of IGBT 1 Thermal Response [Zthjc] 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 single pulse PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 0.001 1E-5 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration [sec] FGA90N33ATD Rev. A 7 www.fairchildsemi.com FGA90N33ATD 330V, 90A PDP Trench IGBT Mechanical Dimensions TO-3P 15.60 0.20 3.80 0.20 13.60 0.20 o3.20 0.10 9.60 0.20 4.80 0.20 1.50 -0.05 +0.15 12.76 0.20 19.90 0.20 16.50 0.30 3.00 0.20 1.00 0.20 3.50 0.20 2.00 0.20 13.90 0.20 23.40 0.20 18.70 0.20 1.40 0.20 5.45TYP [5.45 0.30] 5.45TYP [5.45 0.30] 0.60 -0.05 +0.15 Dimensions in Millimeters FGA90N33ATD Rev. A 8 www.fairchildsemi.com FGA90N33ATD 330V, 90A PDP Trench IGBT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * tm FPSTM F-PFSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) tm PDP-SPMTM Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM Saving our world 1mW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SuperMOSTM (R) The Power Franchise(R) tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FGA90N33ATD Rev. A 9 www.fairchildsemi.com |
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